A temperature‐compensated linear GaAs HBT power amplifier for small‐cell applications in −25 to 125∘C$^\circ \rm C$ lunar environment
نویسندگان
چکیده
A two-stage 920–960 MHz power amplifier (PA) in GaAs heterojunction bipolar transistor (HBT) process is demonstrated for small-cell communications the lunar environment. To cope with temperature fluctuations during days, a novel complementary to absolute (CTAT) biasing scheme proposed PA achieve an ultra-wide-range compensation. Moreover, meet linearity requirements of applications while producing high output power, band-stop filter employed circuit second stage reduce AM– AM distortions. Over range −25 125°C, capable operating over gain ranging from 30.2 32.8 dB. The achieves 24.5 dBm linear −47 dBc adjacent channel leakage ratio (ACLR) and PAE 15%.
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 2022
ISSN: ['0013-5194', '1350-911X']
DOI: https://doi.org/10.1049/ell2.12574